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						<h1 itemprop="headline">Talk - Jianting Ye: Field-induced superconductivity in transition metal dichalcogenides</h1>
						
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									<p><strong>Field-induced superconductivity in transition metal dichalcogenides</strong><strong></strong>
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<p>Jianting Ye<sup></sup>
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<p><em>Device Physics of Complex Materials, Zernike Institute for Advanced Materials</em><em>, Groningen, The Netherlands</em>
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<p>Superconductivity can be induced in the electric-double-layer (EDL) transistors made by layered transition metal dichalcogenides (TMD) [1]. The electric field in the EDL gating breaks the inversion symmetry at the interface between ion and TMDs, which dramatically modifies the bulk energy band by establishing a direct gap between conduction and valence bands at the edges of Brionllion zone. The spin degeneracy is lifted at the <em>K</em>/<em>K</em>’ point by the out-of-plane Zeeman type spin orbit coupling (SOC). In the ion-gated TMD flakes, this effective Zeeman type SOC exhibits strong protection to superconductivity by making Ising-like pairing between the <em>K</em> and <em>K’</em> point, which manifests as significantly enhanced in-plane upper critical field in the magneto-transport. We found an order of magnitude increase of the upper critical field than the bulk superconducting phases, where the same Zeeman type SOC is eliminated by interlayer coupling [2]. The ionic gating not only induces dense charge carriers but also changes the electronic structure by breaking inversion symmetry, which together with spin-orbit coupling can develop novel property in the interface superconductivity.
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<p><strong>References</strong>
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<p>[1] <a name="OLE_LINK13"></a><a name="OLE_LINK12">J. T. Ye, Y. J. Zhang, <em>et al</em>., Science <strong>338</strong>, 1193 (2012).</a>
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<p>[2] J. M. Lu, O. Zheliuk, <em>et al.</em>, Science <strong>350</strong>, 1353 (2015).</p>
								
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